GDAU-003 Gate-Drive Transformer 2:1 200Vus

L (mH) MinDCR (Ω) MaxFreq. (kHz)Cres (pF)Q x,y,z MinHeight (mm)Width (mm)Length (mm)SRF (kHz) MinSensitivity (mV/uT) min
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Characteristics

Gate-Drive Transformer 2:1 200Vus

Features 

•Gate-Drive transformer for thyristors driver
•Working voltage up to 500Vdc
•Functional insulation at 500V
•ETmax product of 200Vµs
•Wide operating temperature range -40 to +105°C
•UL94 and RoHS materials
•AEC-Q200 qualified
•Weight : approx 2grams

Application 

•Automotive PFC stage in onboard battery chargers

Operation

•Thyristors driver control where only functional insulation is needed
          

    L1-3          (10kHz/50Vac)

N1-3 : N6-4  (10kHz/1Vac)

DCR1-3

DCR4-6

lk1-2    (100kHz/1Vac)

CPS (100kHz/1Vac)

Between Windings

GDAU-003

3mH ≤ 5mH TYP ≤ 7mH

2:1

1.2Ω MAX (0.98Ω TYP)

0.6Ω MAX (0.45Ω TYP)

13µH MAX

15pF MAX

500Vac (50Hz/3mA/1min)
Dimensions

GDAU-003 dimensions

PAD LAYOUT

GDAU-003 pad layout

ELECTRICAL DIAGRAM